hzs-n series silicon epitaxial planar zener diodes for stabilized power supply ade-208-124 (z) preliminary rev. 0 aug. 1993 features low leakage, low zener impedance and maximum power dissipation of 400mw are ideally suited for stabilized power supply, etc. wide spectrum from 1.88v through 38.52v of zener voltage provide flexible application. suitable for 5mm-pitch high speed automatic insertion. ordering information type no. mark package code hzs-n series type no. mhd outline 1. cathode
2. anode cathode band type no. 1 2 2
b 7.5 absolute maximum ratings (ta = 25c) item symbol value unit power dissipation pd 400 mw junction temperature tj 200 c storage temperature tstg C55 to +175 c
hzs-n series 2 electrical characteristics (ta = 25c) zener voltage reverse current dynamic resistance v z (v)* test condition i r (a) test condition r d (?) test condition type grade min max i z (ma) max v r (v) max i z (ma) hzs2.0n b1 1.88 2.10 5 120 0.5 100 5 b2 2.02 2.20 hzs2.2n b1 2.12 2.30 5 120 0.7 100 5 b2 2.22 2.41 hzs2.4n b1 2.33 2.52 5 120 1.0 100 5 b2 2.43 2.63 hzs2.7n b1 2.54 2.75 5 100 1.0 110 5 b2 2.69 2.91 hzs3.0n b1 2.85 3.07 5 50 1.0 120 5 b2 3.01 3.22 hzs3.3n b1 3.16 3.38 5 20 1.0 120 5 b2 3.32 3.53 hzs3.6n b1 3.47 3.68 5 10 1.0 120 5 b2 3.62 3.83 hzs3.9n b1 3.77 3.98 5 5 1.0 120 5 b2 3.92 4.14 hzs4.3n b1 4.05 4.26 5 5 1.0 120 5 b2 4.20 4.40 b3 4.34 4.53 hzs4.7n b1 4.47 4.65 5 5 1.0 100 5 b2 4.59 4.77 b3 4.71 4.91 hzs5.1n b1 4.85 5.03 5 5 1.5 70 5 b2 4.97 5.18 b3 5.12 5.35 hzs5.6n b1 5.29 5.52 5 5 2.5 40 5 b2 5.46 5.70 b3 5.64 5.88 hzs6.2n b1 5.81 6.06 5 5 3.0 30 5 b2 5.99 6.24 b3 6.16 6.40 note: tested with pulse (p w = 40ms)
hzs-n series 3 electrical characteristics (ta = 25c) (cont) zener voltage reverse current dynamic resistance v z (v)* test condition i r (a) test condition r d (?) test condition type grade min max i z (ma) max v r (v) max i z (ma) hzs6.8n b1 6.32 6.59 5 2 3.5 25 5 b2 6.52 6.79 b3 6.70 6.97 hzs7.5n b1 6.88 7.19 5 0.5 4.0 25 5 b2 7.11 7.41 b3 7.33 7.64 hzs8.2n b1 7.56 7.90 5 0.5 5.0 20 5 b2 7.82 8.15 b3 8.07 8.41 hzs9.1n b1 8.33 8.70 5 0.5 6.0 20 5 b2 8.61 8.99 b3 8.89 9.29 hzs10n b1 9.19 9.59 5 0.2 7.0 20 5 b2 9.48 9.90 b3 9.82 10.30 hzs11n b1 10.18 10.63 5 0.2 8.0 20 5 b2 10.50 10.95 b3 10.82 11.26 hzs12n b1 11.13 11.63 5 0.2 9.0 25 5 b2 11.50 11.92 b3 11.80 12.30 hzs13n b1 12.18 12.71 5 0.2 10 25 5 b2 12.59 13.16 b3 13.03 13.62 hzs15n b1 13.48 14.09 5 0.2 11 25 5 b2 13.95 14.56 b3 14.42 15.02 hzs16n b1 14.87 15.50 5 0.2 12 25 5 b2 15.33 15.96 b3 15.79 16.50 note: tested with pulse (p w = 40ms)
hzs-n series 4 electrical characteristics (ta = 25c) (cont) zener voltage reverse current dynamic resistance v z (v)* test condition i r (a) test condition r d (?) test condition type grade min max i z (ma) max v r (v) max i z (ma) hzs18n b1 16.34 17.06 5 0.2 13 30 5 b2 16.90 17.67 b3 17.51 18.30 hzs20n b1 18.14 18.96 5 0.2 15 30 5 b2 18.80 19.68 b3 19.52 20.45 hzs22n b1 20.23 21.08 5 0.2 17 30 5 b2 20.76 21.65 b3 21.22 22.09 b4 21.68 22.61 hzs24n b1 22.26 23.12 5 0.2 19 35 5 b2 22.75 23.73 b3 23.29 24.27 b4 23.81 24.81 hzs27n b1 24.26 25.52 5 0.2 21 45 5 b2 24.97 26.26 b3 25.63 26.95 b4 26.29 27.64 hzs30n b1 26.99 28.39 5 0.2 23 55 5 b2 27.70 29.13 b3 28.36 29.82 b4 29.02 30.51 HZS33N b1 29.68 31.22 5 0.2 25 65 5 b2 30.32 31.88 b3 30.90 32.50 b4 31.49 33.11 hzs36n b1 32.14 33.79 5 0.2 27 75 5 b2 32.79 34.49 b3 33.40 35.13 b4 34.01 35.77 note: tested with pulse (p w = 40ms)
hzs-n series 5 electrical characteristics (ta = 25c) (cont) zener voltage reverse current dynamic resistance v z (v)* test condition i r (a) test condition r d (?) test condition type grade min max i z (ma) max v r (v) max i z (ma) hzs39n b1 34.68 36.47 5 0.2 30 85 5 b2 35.36 37.19 b3 36.00 37.85 b4 36.63 38.52 note: tested with pulse (p w = 40ms) type no. is as follows: hzs2.0nb1, hzs2.0nb2, ??? hzs39nb4. 10 8 6 4 2 0 4 8 12 16 20 zener current i (ma) z zener voltage v (v) z 24 28 32 40 36 hzs6.8n hzs13n hzs15n hzs18n hzs2.0n hzs20n hzs22n hzs36n hzs39n hzs30n hzs2.4n hzs3.0n hzs3.6n hzs4.3n hzs5.1n hzs6.2n hzs7.5n hzs8.2n hzs9.1n hzs10n hzs11n hzs12n hzs16n hzs24n hzs27n HZS33N fig.1 zener current vs. zener voltage
hzs-n series 6 0510 15 20 25 30 35 40 zener voltage v (v) zener voltage temperature coefficient (%/ c) z g 50 40 30 20 10 0 ?0 ?0 ?0 ?0 ?0 0.10 0.08 0.06 0.04 0.02 0 ?.02 ?.04 ?.06 ?.08 ?.10 z zener voltage temperature coefficient (mv/ c) z g %/ c mv/ c fig.2 temperature coefficient vs. zener voltage 500 400 300 200 100 200 150 100 50 0 ambient temperature ta ( c) power dissipation p (mw) d 0 2.5mm 3mm printed circuit board 100 180 1.6t mm material: paper phenol l l = 5mm l = 10mm (publication value) fig.3 power dissipation vs. ambient temperature
hzs-n series 7 package dimensions 2 abbreviation of type name type name without hzs n. zener voltage classification symbol equal to b1 or b3. expanded drawing of marking 26.0 min 2.4 max 2.0 max 0.4 f f 26.0 min cathode band (black) type no. (black) 2 b 7.5 b 7.5 12 hitachi code jedec code eiaj code weight (g) mhd do-34 0.084 1 2 cathode anode unit: mm
|
